Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method

被引：145

作者：

Cheng, Hua-Chi ^{[1
]}

Chen, Chia-Fu

Tsay, Chien-Yie

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期

关键词：

D O I：

10.1063/1.2404590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Top-gate thin film transistors with n-type ZnO active channel were performed under 230 degrees C. Especially, ZnO film was deposited by a combined method of sol-gel and chemical bath deposition without any preactivation for film growth. Silicon nitride and indium tin oxide were used as the gate insulator and the conducting electrodes (source, drain, and gate). These transistors were highly transparent in the visible spectrum, with transmittance as high as 75% to approximately 85% at wavelength from 500 to 700 nm. The optimum device has field-effect mobility of 0.67 cm(2)/V s and an on-off ratio more than 10(7).

引用

页数：3

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