Optical gain in InGaN/GaN quantum well structures with embedded AlGaN δ layer

被引：82

作者：

Park, Seoung-Hwan ^{[1
]}

Park, Jongwoon

Yoon, Euijoon

机构：

[1] Catholic Univ Daegu, Dept Elect Engn, Kyeongbuk 712702, South Korea

[2] Kyoto Univ, Dept Comp Sci & Elect Engn, Nishikyo Ku, Kyoto 6158510, Japan

[3] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

关键词：

D O I：

10.1063/1.2431477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical gain characteristics of InGaN/GaN double quantum well (QW) structures with embedded AlGaN delta layer are investigated using the multiband effective mass theory. These results are compared with those of single QW structure without a delta layer. The theoretical energies show very good agreement with the experimental results for both single and double QW structures. The inclusion effect of a delta layer is found to be dominant at a relatively low carrier density. A double QW structure has larger optical gain than the single QW structure, in particular, at higher carrier density.

引用

页数：3

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