Anisotropic Structure Deformation in the VO2 Metal-Insulator Transition

被引：114

作者：

Booth, Jamie M. ^{[1
]}

Casey, Philip S. ^{[1
]}

机构：

[1] CSIRO Mat Sci & Engnc, Clayton, Vic 3169, Australia

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 08期

关键词：

DOPED VANADIUM DIOXIDE; DISPLACIVE PHASE-TRANSITION; TUNGSTEN;

D O I：

10.1103/PhysRevLett.103.086402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X-ray absorption fine structure data of tungsten (VI)-doped vanadium dioxide in the insulating phase, and during the metal-insulator transition, are presented for the first time. Tungsten L-III- and vanadium K-edge data suggest that significant expansion in the [110] and [110] directions occurs across the phase transition from low to high temperature. This distortion breaks the bonds between Peierls-paired vanadium ions, opening a band gap, and reveals the nature of the mechanism by which tungsten doping lowers the transition temperature and enthalpy.

引用

页数：4

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