Total dose effects on CMOS active pixel sensors

被引：27

作者：

Bogaerts, J ^{[1
]}

Dierickx, B ^{[1
]}

机构：

[1] Imec, B-3001 Louvain, Belgium

来源：

SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL AND DIGITAL PHOTOGRAPHY APPLICATIONS | 2000年 / 3965卷

关键词：

CMOS image sensors; APS; total ionizing dose; dark current;

D O I：

10.1117/12.385432

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Co-60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors (APS) that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage effects such as field leakage currents and dark current increase are discussed in detail. Two different approaches to overcome these problems are considered and their advantages and disadvantages are compared. Total dose results are presented on a pixel that can tolerate more than 200 kGy(Si) (20 Mrad(Si)) from a Co-60 source.

引用

页码：157 / 167

页数：11

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