Growth of zinc peroxide (ZnO2) and zinc oxide (ZnO) thin films by the successive ionic layer adsorption and reaction -: SILAR -: technique

被引：57

作者：

Lindroos, S ^{[1
]}

Leskelä, M ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland

来源：

INTERNATIONAL JOURNAL OF INORGANIC MATERIALS | 2000年 / 2卷 / 2-3期

关键词：

oxides; thin films; semiconductors; chemical synthesis; X-ray diffraction;

D O I：

10.1016/S1466-6049(00)00017-9

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Zinc peroxide, ZnO2, thin films were grown by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and normal pressure. The thin films were grown on glass, quartz, silicon, on poly(vinyl chloride) and polycarbonate substrates. The precursors used for ZnO2 films were diluted aqueous solutions of ZnCl2 complexed with ethylenediamine for cation and H2O2 for anion constituent of the film. The zinc peroxide film could be decomposed to zinc oxide by annealing in air or in vacuum. The as-grown films were polycrystalline, or amorphous and the annealed films were amorphous on all substrate materials. According to scanning electron microscopy images the films were uniform and homogeneous. The films were also characterized by UV spectroscopy. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：197 / 201

页数：5

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