GROWTH OF ZNO BY MOCVD USING ALKYLZINC ALKOXIDES AS SINGLE-SOURCE PRECURSORS

被引:79
作者
AULD, J
HOULTON, DJ
JONES, AC
RUSHWORTH, SA
MALIK, MA
OBRIEN, P
CRITCHLOW, GW
机构
[1] UNIV LONDON,QUEEN MARY & WESTFIELD COLL,DEPT CHEM,LONDON E1 4NS,ENGLAND
[2] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND
关键词
D O I
10.1039/jm9940401249
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of ZnO have been grown by low-pressure MOCVD using methylzinc isopropoxide, MeZn(OPr(i)), and methylzinc tert-butoxide, MeZn(OBu(t)), in the absence of an added oxygen source. The films were grown on to glass substrates in the temperature range 250-400-degrees-C with growth rates of between 0.2 and 4.4 mum h-1.
引用
收藏
页码:1249 / 1253
页数:5
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共 22 条
  • [1] INVESTIGATIONS ON COORDINATION CHEMISTRY OF ORGANOZINC COMPOUNDS .12. MASS-SPECTROMETRIC INVESTIGATION OF METHYL ZINC ALCOXIDES
    ADLER, B
    LACHOWICZ, A
    THIELE, KH
    [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1976, 423 (01): : 27 - 34
  • [2] ARONOVICH J, 1979, J VAC SCI TECHNOL, V16, P994
  • [3] NEW, CONVENIENT, AND STEREOSPECIFIC METHOD FOR THE DEHYDRATION OF ALCOHOLS - THERMAL-DECOMPOSITION OF MAGNESIUM, ZINC, AND ALUMINUM ALKOXIDES - MECHANISTIC STUDY
    ASHBY, EC
    WILLARD, GF
    GOEL, AB
    [J]. JOURNAL OF ORGANIC CHEMISTRY, 1979, 44 (08) : 1221 - 1232
  • [4] BARNES JO, 1980, J ELECTROCHEM SOC, V7, P1636
  • [5] ALKOXY- THIO- AND AMINO-DERIVATIVES OF METHYLZINC
    COATES, GE
    RIDLEY, D
    [J]. JOURNAL OF THE CHEMICAL SOCIETY, 1965, (MAR): : 1870 - &
  • [6] SINGLE-CRYSTAL GROWTH BY MOCVD OF ZINC-BASED CHALCOGENIDES USING NEW GROUP-II ADDUCT SOURCES
    COCKAYNE, B
    WRIGHT, PJ
    ARMSTRONG, AJ
    JONES, AC
    ORRELL, ED
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 91 (1-2) : 57 - 62
  • [7] HIGHLY ORIENTED ZINC-OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINC
    GHANDHI, SK
    FIELD, RJ
    SHEALY, JR
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 449 - 451
  • [8] Trimethylamine Complexes of Alane as Precursors for the Low-Pressure Chemical Vapor Deposition of Aluminum
    Gladfelter, Wayne L.
    Boyd, David C.
    Jensen, Klays F.
    [J]. CHEMISTRY OF MATERIALS, 1989, 1 (03) : 339 - 343
  • [9] ON THE USE OF BASIC ZINC ACETATE ZN4O(CH3CO2)6 AS A NOVEL PRECURSOR FOR THE DEPOSITION OF ZNO BY LOW-PRESSURE METALLO ORGANIC-CHEMICAL VAPOR-DEPOSITION - THEIR CHARACTERIZATION BY LOW-ENERGY ELECTRON INDUCED X-RAY-EMISSION SPECTROSCOPY
    GYANI, AK
    KHAN, OFZ
    OBRIEN, P
    URCH, DS
    [J]. THIN SOLID FILMS, 1989, 182 : L1 - L3
  • [10] DC REACTIVE MAGNETRON SPUTTERED ZNO FILMS
    HATA, T
    MINAMIKAWA, T
    MORIMOTO, O
    HADA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (02) : 171 - 176