A semiconducting AlN coating for microstrip gas chambers

被引：2

作者：

Bondar, A

Buzulutskov, A

Nagaslaev, V

Shekhtman, L

Tatarinov, A

BlautBlachev, A

Bouilov, L

Spitsyn, B

机构：

[1] BUDKER INST NUCL PHYS,NOVOSIBIRSK 630090,RUSSIA

[2] RUSSIAN ACAD SCI,INST PHYS CHEM,MOSCOW 117915,RUSSIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 394卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(97)00646-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

AlN, a new semiconducting coating for microstrip gas chambers (MSGC) has been studied: The AIN surface resistivity is about 2 x 10(15) Ohm/square at a film thickness between 0.2 and 0.4 mu m. The rate capability of an MSGC with AlN undercoating is 10(5)-10(6) mm(-2) s(-1) depending on the surface resistivity value. The compatability of AIN undercoating with a particular lithographic technique for MSGCs with gold strips is investigated.

引用

收藏

页码：265 / 267

页数：3

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