Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates

被引：6

作者：

Fujikura, H

Muranaka, T

Hasegawa, H

机构：

[1] Hokkaido Univ, RCIQE, Kita Ku, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan

来源：

PHYSICA E | 2000年 / 7卷 / 3-4期

关键词：

coupled quantum structures; selective MBE growth; InGaAs/InAlAs; quantum wires; quantum dots;

D O I：

10.1016/S1386-9477(00)00078-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Attempts were made to realize device-oriented InGaAs coupled quantum structures by selective molecular beam epitaxy (MBE) on specially designed patterned InP substrates. At first, selective MBE growth of individual quantum wires (QWRs) and quantum dots (QDs) were established. By combining these growths, InGaAs/InAlAs QWR-QD-QWR coupled structures and QWR Y-branch couplers were successfully formed. The QWR-QD-QWR coupled structure realized a double-barrier potential profile needed for a single-electron transistor. A QWR honeycomb network consisting of the QWR Y-branch couplers seems promising for constructing quantum device networks and quantum/classical interconnections. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：864 / 869

页数：6

共 7 条

[1] Fabrication of InGaAs quantum wires and dots by selective molecular beam epitaxial growth on various mesa-patterned (001)InP substrates [J].