Frequency analysis on poly(3-hexylthiopene) rectifier using impedance spectroscopy

被引：26

作者：

Kang, Chan-mo ^{[1
]}

Kim, Seohee ^{[1
]}

Hong, Yongtaek ^{[1
]}

Lee, Changhee ^{[1
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

THIN SOLID FILMS | 2009年 / 518卷 / 02期

关键词：

Impedance spectroscopy; P3HT diode; Frequency analysis; Organic rectifier; CIRCUITS; DIODES; TRANSISTORS;

D O I：

10.1016/j.tsf.2009.07.110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated poly(3-hexylthiophene) (P3HT) rectifiers with the 3-dB frequency higher than 2 MHz and analyzed their frequency characteristics using an impedance spectroscopy as well as current density-voltage (J-V) measurement. The J-V characteristics showed a typical diode behavior with good rectification ratio (similar to 5 x 10(4)). We extracted modeling parameters of the equivalent circuit and analyzed the interface and bulk characteristics of the P3HT diode from the impedance plot. The P3HT/Al interface layer shows highest RC constant. The diode with thin P3HT film exhibits lower RC constant at the P3HT/Al interface compared to thick P3HT films and therefore it shows better frequency response. The diode frequency response is analyzed using the P3HT mobility estimated by fitting the J-V characteristics with the space-charge-limited current (SCLC) formula. This mobility is similar to the mobility measured by the time-of-flight photoconductivity technique. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：889 / 892

页数：4

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