Nanowire-based one-dimensional electronics

被引：610

作者：

Thelander, C.

Agarwal, P.

Brongersma, S.

Eymery, J.

Feiner, L. F.

Forchel, A.

Scheffler, M.

Riess, W.

Ohlsson, B. J.

Goesele, U.

Samuelson, L.

机构：

[1] Lund Univ, S-22100 Lund, Sweden

[2] Philips Res Leuven, B-3001 Louvain, Belgium

[3] IMEC, B-3001 Louvain, Belgium

[4] CEA, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

[5] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[6] Univ Wurzburg, D-97074 Wurzburg, Germany

[7] Delft Univ Technol, Kavli Inst Neurosci, NL-2600 GA Delft, Netherlands

[8] IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

[9] Qumat Technol AB, S-22224 Lund, Sweden

[10] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

MATERIALS TODAY | 2006年 / 9卷 / 10期

关键词：

D O I：

10.1016/S1369-7021(06)71651-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During the last half century, a dramatic downscaling of electronics has taken place, a miniaturization that the industry expects to continue for at least a decade. We present efforts to use the self-assembly of one-dimensional semiconductor nanowires(1) in order to bring new, high-performance nanowire devices as an add-on to mainstream Si technology. The nanowire approach offers a coaxial gate-dielectric-channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Si wafers.

引用

页码：28 / 35

页数：8

共 29 条

[11] Directed assembly of one-dimensional nanostructures into functional networks
Huang, Y
Duan, XF
Wei, QQ
Lieber, CM
[J]. SCIENCE, 2001, 291 (5504) : 630 - 633
[12] Defect-free InP nanowires grown in [001] direction on InP(001)
Krishnamachari, U
Borgstrom, M
Ohlsson, BJ
Panev, N
Samuelson, L
Seifert, W
Larsson, MW
Wallenberg, LR
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (11) : 2077 - 2079
[13] One-dimensional hole gas in germanium/silicon nanowire heterostructures
Lu, W
Xiang, J
Timko, BP
Wu, Y
Lieber, CM
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (29) : 10046 - 10051
[14] Epitaxial III-V nanowires on silicon
Mårtensson, T
Svensson, CPT
Wacaser, BA
Larsson, MW
Seifert, W
Deppert, K
Gustafsson, A
Wallenberg, LR
Samuelson, L
[J]. NANO LETTERS, 2004, 4 (10) : 1987 - 1990
[15] Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth
Mårtensson, T
Borgström, M
Seifert, W
Ohlsson, BJ
Samuelson, L
[J]. NANOTECHNOLOGY, 2003, 14 (12) : 1255 - 1258
[16] Catalyst metal selection for synthesis of inorganic nanowires
Nguyen, P
Ng, HT
Meyyappan, M
[J]. ADVANCED MATERIALS, 2005, 17 (14) : 1773 - +
[17] Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
Noborisaka, J
Motohisa, J
Fukui, T
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (21) : 1 - 3
[18] Solid-phase diffusion mechanism for GaAs nanowire growth
Persson, AI
Larsson, MW
Stenström, S
Ohlsson, BJ
Samuelson, L
Wallenberg, LR
[J]. NATURE MATERIALS, 2004, 3 (10) : 677 - 681
[19] Samuelson L., 2003, MATER TODAY, V6, P22, DOI [DOI 10.1016/S1369-7021(03)01026-5, 10. 1016/S1369-7021(03)01026-5]
[20] Realization of a silicon nanowire vertical surround-gate field-effect transistor
Schmidt, V
Riel, H
Senz, S
Karg, S
Riess, W
Gösele, U
[J]. SMALL, 2006, 2 (01) : 85 - 88

← 1 2 3 →