HBT IC manufacturability and reliability

被引：7

作者：

Hafizi, M

机构：

[1] Hughes Research Lab., Malibu, CA 90265

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(97)00111-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HBT based integrated circuits have reached LSI levels of integration complexity with both GaAs- and InP-based technologies. A wide range of application areas are suitable for HBT integrated circuits ranging in frequencies from below 1 GHz to above 40 GHz. In this article we will present manufacturability and reliability of these technologies with particular emphasis on InP-based HBT IC's. Technology requirements for different application areas are presented with specific integrated circuit examples. Key HBT reliability issues are also presented including discrete devices and IC reliability. (C) 1997 Elsevier Science Ltd.

引用

页码：1591 / 1598

页数：8

共 27 条

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