THE DC CHARACTERISTICS OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH APPLICATION TO DEVICE MODELING

A complete dc model for the heterojunction bipolar transistor (HBT) is presented. The dc characteristics of the HBT are compared with the Ebers-Moll (EM) model used by conventional bipolar junction transistors (BJT) and implemented in simulation and modeling programs. It is shown that although the details of HBT operation can differ markedly from those of a BJT, a model and a parameter extraction technique can be developed which has both physical meaning and exactly compatible with the EM models widely used for BJT’s. Device 1-V measurements at 77 and 300 K are used to analyze the HBT physical device performance in the context of an EM model. A new technique is developed to extract the device base, emitter, and collector series resistances directly from the measured I–V data without requiring an ideal exp (qVhe/kT) base current as reference. Accuracies of the extracted series resistances are assessed. AC parameters of HBT are calculated numerically from the physical device structure. For modeling purposes, these parameters are shown to be comparable with those of conventional BJT’s. © 1990 IEEE