Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

被引：50

作者：

Kim, Hyoung-Sub ^{[1
]}

Ok, Injo ^{[1
]}

Zhang, Manhong ^{[1
]}

Lee, Tackhwi ^{[1
]}

Zhu, Feng ^{[1
]}

Yu, Lu ^{[1
]}

Lee, Jack C. ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期

关键词：

15;

D O I：

10.1063/1.2396912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the authors present the capacitance-voltage and current-voltage characteristics of TaN/HfO2/n-GaAs metal-oxide-semiconductor capacitors with thin silicon and germanium interfacial passivation layers (IPLs). Physical vapor deposition high-k dielectric films and silicon/germanium IPLs were deposited on GaAs substrate which has been cleaned with HCl and (NH4)(2)S solutions. Equivalent oxide thickness (EOT) of 12.5 angstrom and dielectric leakage current density of 2.0x10(-4) A/cm(2) at parallel to V-G-V-FB parallel to=1 V with low capacitance-voltage frequency dispersion have been obtained. The results indicate that the use of a thin silicon/germanium IPL assists in scaling EOT below 13 angstrom, while improving the quality of the interface. (c) 2006 American Institute of Physics.

引用

页数：3

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