Effect of electron bombardment on the properties of ZnO thin films

被引：14

作者：

Karuppasamy, A. ^{[1
]}

Subrahmanyam, A. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Semicond Lab, Madras 600036, Tamil Nadu, India

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 4-5期

关键词：

zinc oxide thin films; electron bombardment; surface annealing; photoluminescence;

D O I：

10.1016/j.matlet.2006.07.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide thin films deposited on quartz substrates were subjected to electron beam irradiation. The effect of electron bombardment on the structural, optical and luminescent properties of the film has been investigated. The electron bombardment leads to better crystallinity, enhanced UV emission and a red shift of 0.025 eV in the band gap of ZnO thin films. The changes in the material property are ascribed to the surface annealing effect of electron beam irradiation. However, the annealing effects induced by electron beam are found to be distinct compared to the high temperature (800 degrees C) thermal annealing. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1256 / 1259

页数：4

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