Many-body effects on the transport properties of single-molecule devices

被引:137
作者
Cornaglia, PS [1 ]
Ness, H [1 ]
Grempel, DR [1 ]
机构
[1] CEA Saclay, DSM DRECAM SPCSI, F-91191 Gif Sur Yvette, France
关键词
D O I
10.1103/PhysRevLett.93.147201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The conductance through a molecular device including electron-electron and electron-phonon interactions is calculated using the numerical renormalization group method. At low temperatures and weak electron-phonon coupling the properties of the conductance can be explained in terms of the standard Kondo model with renormalized parameters. At large electron-phonon coupling a charge analog of the Kondo effect takes place that can be mapped into an anisotropic Kondo model. In this regime the molecule is strongly polarized by a gate voltage which leads to rectification in the current-voltage characteristics of the molecular junction.
引用
收藏
页码:147201 / 1
页数:4
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