Diffusion barrier properties of ZrN films in the Cu/Si contact systems

被引：77

作者：

Takeyama, MB ^{[1
]}

Noya, A ^{[1
]}

Sakanishi, K ^{[1
]}

机构：

[1] Kitami Inst Technol, Fac Engn, Dept Elect & Elect Engn, Kitami, Hokkaido 0908507, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thermally stable Cu/ZrN/Si contact system using a ZrN diffusion barrier of low resistivity was developed. In the contact system, the growth of an oriented ZrN(100) layer on Si(100), and subsequent growth of a Cu(110) layer on ZrN(100) were observed. The obtained contact system was fairly stable after annealing even at 750 degrees C for 1 h without any diffusion and/or reactions at either the interface of Cu/ZrN or ZrN/Si. It was revealed that the ZrN layer with low electrical resistivity showed a high performance as a diffusion barrier, and was one of the excellent materials for the use in ultralarge scale integration technology. (C) 2000 American Vacuum Society. [S0734-211X(00)03403-X].

引用

页码：1333 / 1337

页数：5

共 25 条

[1] EPITAXIAL-GROWTH OF ZRN ON SI(100) [J].

BARNETT, SA ;

HULTMAN, L ;

SUNDGREN, JE ;

RONIN, F ;

ROHDE, S .

APPLIED PHYSICS LETTERS, 1988, 53 (05) :400-402

[2]

Benn W.R., 1964, RES DEV, V15, P54

[3] REACTION BETWEEN CU AND TISI2 ACROSS DIFFERENT BARRIER LAYERS [J].

CHANG, CA ;

HU, CK .

APPLIED PHYSICS LETTERS, 1990, 57 (06) :617-619

[4]

Hansen M., 1985, CONSTITUTION BINARY

[5]

HARA T, 1995, INF COMMUN ENG, P305

[6] MATERIAL PROPERTIES OF A ZRNX FILM ON SILICON PREPARED BY ION-ASSISTED DEPOSITION METHOD [J].

HORITA, S ;

TUJIKAWA, T ;

AKAHORI, H ;

KOBAYASHI, M ;

HATA, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (05) :2452-2457

[7]

KAGOMI S, 1995, T I EL INF COMM ENG, P489

[8] SPUTTERED TA-SI-N DIFFUSION-BARRIERS IN CU METALLIZATIONS FOR SI [J].

KOLAWA, E ;

POKELA, PJ ;

REID, JS ;

CHEN, JS ;

RUIZ, RP ;

NICOLET, MA .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) :321-323

[9] TANTALUM-BASED DIFFUSION-BARRIERS IN SI/CU VLSI METALLIZATIONS [J].

KOLAWA, E ;

CHEN, JS ;

REID, JS ;

POKELA, PJ ;

NICOLET, MA .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1369-1373

[10] ZRN DIFFUSION BARRIER IN ALUMINUM METALLIZATION SCHEMES [J].

KRUSINELBAUM, L ;

WITTMER, M ;

TING, CY ;

CUOMO, JJ .

THIN SOLID FILMS, 1983, 104 (1-2) :81-87

← 1 2 3 →