Origin of the near-band-edge photoluminescence emission in aqueous chemically grown ZnO nanorods

被引：50

作者：

Bekeny, Chegnui

Voss, Tobias

Gafsi, Houcem

Gutowski, Juergen

Postels, Bianca

Kreye, Marc

Waag, Andreas

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

[2] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 10期

关键词：

D O I：

10.1063/1.2390548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of ZnO nanorods realized by an advanced low-temperature aqueous chemical growth on both silicon and plastic substrates are presented. Systematic photoluminescence investigations in the temperature range of 4-293 K reveal strong and well-resolved near-band-edge emission even for rods on plastic substrate, and a weak deep-level emission. At intermediate temperatures phonon replicas of excitonic lines are observable. The optimum molar concentration range of the solution for obtaining nanorods of good optical quality is shown to lie between 0.025M and 0.075M. The large linewidth of the near-band-edge emission (similar to 10 meV), its temperature dependence, and the absence of sharp excitonic transitions indicate that this emission is a result of transitions from a band of donor states. (c) 2006 American Institute of Physics.

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页数：4

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