Modeling electrical characteristics of thin-film field-effect transistors II: Effects of traps and impurities

被引：21

作者：

Stallinga, P. ^{[1
]}

Gomes, H. L. ^{[1
]}

机构：

[1] Univ Algarve, FCT, Faro, Portugal

来源：

SYNTHETIC METALS | 2006年 / 156卷 / 21-24期

关键词：

thin-film field effect transistors; amorphous silicon; organic semiconductors; traps;

D O I：

10.1016/j.synthmet.2006.09.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on a new model for thin-film field-effect transistors, in which the active layer is treated as purely two-dimensional, the effects of impurities on the electrical characteristics are discussed. Localized electronic levels are introduced into the model. It is shown that the presence of traps readily accounts for the non-linearities in the current-voltage curves. Trap states can also explain the temperature dependence of the current and mobility, including the so-called Meyer-Neldel Rule. Finally, transients are qualitatively discussed. (c) 2006 Elsevier B.V. All rights reserved.

引用

收藏

页码：1316 / 1326

页数：11

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