Charge spectroscopy of Si nanocrystallites embedded in a SiO2 matrix

被引：14

作者：

Antonova, Irina V. ^{[1
]}

Volodin, Vladimir A. ^{[1
,2
]}

Neustroev, Efim P. ^{[3
]}

Smagulova, Svetlana A. ^{[3
]}

Jedrzejewsi, Jedrzej ^{[4
]}

Balberg, Isaac ^{[4
]}

机构：

[1] RAS, SB, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Yakutsk State Univ, Yakutsk 677891, Russia

[4] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 06期

基金：

以色列科学基金会; 俄罗斯基础研究基金会;

关键词：

ON-INSULATOR STRUCTURES; ELECTRICAL-PROPERTIES; SILICON NANOCRYSTALS; BONDED INTERFACE; DEEP LEVELS; PHOTOLUMINESCENCE; HETEROSTRUCTURES; LAYERS; DLTS;

D O I：

10.1063/1.3224865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the present work we have determined the electronic levels in systems of Si nanocrystallites (NCs) embedded in the insulating matrix of silicon dioxide, SiO2, by employing the charge deep-level transient spectroscopy (Q-DLTS) technique. We have clearly shown that these levels are associated with the NCs. Correspondingly, we suggest that the levels that we found are associated mainly with two quantum confinement energies, 0.14 and 0.19 eV. These energies are shown to be consistent with the corresponding theoretical estimates for the presently studied Si-NCs/SiO2 systems. The fact that these levels are almost fixed for the various samples studied suggests the importance of the bulk-surface coupling under quantum confinement conditions. (C) 2009 American Institute of Physics. [doi:10.1063/1.3224865]

引用

页数：6

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