Modification of the bonded interface in silicon-on-insulator structures under thermal treatment in hydrogen ambient

Results of a comparative charge deep-level transient spectroscopy study of Si/SiO2 interfaces in silicon-on-insulator structures prepared by wafer bonding and hydrogen slicing, and subsequently annealed in a hydrogen ambient in the temperature range of 430 to 670 degreesC are described. The trap transformations at the bonded interface are strongly discriminated from passivation of traps at the Si/thermal SiO2 interface. The nature of traps at the bonded interface is found to differ from that of traps at the Si/thermal SiO2 interface. Heat treatments at T>430 degreesC are shown to induce significant changes in virgin spectra of traps at bonded interfaces due to the generation of traps. (C) 2003 American Institute of Physics.