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CHARGE TRANSIENT SPECTROSCOPY
被引:72
作者
:
FARMER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211
UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211
FARMER, JW
[
1
]
LAMP, CD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211
UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211
LAMP, CD
[
1
]
MEESE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211
UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211
MEESE, JM
[
1
]
机构
:
[1]
UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211
来源
:
APPLIED PHYSICS LETTERS
|
1982年
/ 41卷
/ 11期
关键词
:
D O I
:
10.1063/1.93401
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1063 / 1065
页数:3
相关论文
共 8 条
[1]
CURRENT TRANSIENT SPECTROSCOPY - A HIGH-SENSITIVITY DLTS SYSTEM
[J].
BORSUK, JA
论文数:
0
引用数:
0
h-index:
0
BORSUK, JA
;
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(12)
:2217
-2225
[2]
FARMER JW, J NUCL MATER
[3]
NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS
[J].
KIMERLING, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
KIMERLING, LC
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1976,
23
(06)
:1497
-1505
[4]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[5]
FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3014
-3022
[6]
MEESE JM, 1981, NEUTRON TRANSMUTATIO, P101
[7]
THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
;
FORBES, L
论文数:
0
引用数:
0
h-index:
0
FORBES, L
;
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
TASCH, AF
.
SOLID-STATE ELECTRONICS,
1970,
13
(06)
:759
-+
[8]
DETERMINATION OF DEEP LEVELS IN CU-DOPED GAP USING TRANSIENT-CURRENT SPECTROSCOPY
[J].
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
WESSELS, BW
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(03)
:1131
-1133
←
1
→
共 8 条
[1]
CURRENT TRANSIENT SPECTROSCOPY - A HIGH-SENSITIVITY DLTS SYSTEM
[J].
BORSUK, JA
论文数:
0
引用数:
0
h-index:
0
BORSUK, JA
;
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(12)
:2217
-2225
[2]
FARMER JW, J NUCL MATER
[3]
NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS
[J].
KIMERLING, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
KIMERLING, LC
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1976,
23
(06)
:1497
-1505
[4]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
[5]
FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3014
-3022
[6]
MEESE JM, 1981, NEUTRON TRANSMUTATIO, P101
[7]
THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
;
FORBES, L
论文数:
0
引用数:
0
h-index:
0
FORBES, L
;
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
;
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
TASCH, AF
.
SOLID-STATE ELECTRONICS,
1970,
13
(06)
:759
-+
[8]
DETERMINATION OF DEEP LEVELS IN CU-DOPED GAP USING TRANSIENT-CURRENT SPECTROSCOPY
[J].
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
WESSELS, BW
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(03)
:1131
-1133
←
1
→