Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing

被引：33

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Annealing of SiO2/(100)Si interfaces in hydrogen in the temperature range of 500-800 degrees C is found to introduce a considerable density of fixed positive charge. The charge is diamagnetic, and shows no correlation with any kind of dangling bond defects at the Si surface or in the oxide. The observed charged state is attributed to hydrogen bonding to a bridging oxygen atom at the interface (threefold coordinated oxygen center), which may account for the well-known oxidation-induced charge at the Si/SiO2 interfaces. (C) 1998 American Institute of Physics.

引用

页码：79 / 81

页数：3

共 19 条

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