PROCESS-INDUCED INTERFACE AND BULK STATES IN MOS STRUCTURES

[1] EXPERIMENTAL-DETERMINATION OF THE TEMPERATURE-DEPENDENCE OF ARGON ANNEALED FIXED OXIDE CHARGE AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 263 - 265

[2] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[3] Cheng Y., 1977, PROG SURF SCI, V8, P181

[4] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : C198 - C205

[5] DEAL BE, 1977, ELECTROCHEMICAL SOC, P276

[6] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[7] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[8] GRAFF K, 1981, ELECTROCHEMICAL SOC, P331

[9] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389

[10] EFFECT OF ADDING HCL TO THE OXIDIZING AMBIENT ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3484 - 3490

[1] EXPERIMENTAL-DETERMINATION OF THE TEMPERATURE-DEPENDENCE OF ARGON ANNEALED FIXED OXIDE CHARGE AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 263 - 265

[2] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[3] Cheng Y., 1977, PROG SURF SCI, V8, P181

[4] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : C198 - C205

[5] DEAL BE, 1977, ELECTROCHEMICAL SOC, P276

[6] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[7] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[8] GRAFF K, 1981, ELECTROCHEMICAL SOC, P331

[9] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389

[10] EFFECT OF ADDING HCL TO THE OXIDIZING AMBIENT ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3484 - 3490