EFFECT OF ADDING HCL TO THE OXIDIZING AMBIENT ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：11

作者：

HAMASAKI, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

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D O I：

10.1063/1.329125

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：3484 / 3490

页数：7

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