EXPERIMENTAL-DETERMINATION OF THE TEMPERATURE-DEPENDENCE OF ARGON ANNEALED FIXED OXIDE CHARGE AT THE SI/SIO2 INTERFACE

被引:10
作者
AKINWANDE, AI
HO, CP
PLUMMER, JD
机构
关键词
D O I
10.1063/1.95165
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:263 / 265
页数:3
相关论文
共 20 条
[1]  
Cheng Y., 1977, PROG SURF SCI, V8, P181
[2]   CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].
DEAL, BE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205
[3]   VISCOUS-FLOW OF THERMAL SIO2 [J].
EERNISSE, EP .
APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293
[4]   VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J].
EERNISSE, EP ;
DERBENWICK, GF .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1534-1539
[5]   HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J].
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
VASQUEZ, RP ;
LEWIS, BF ;
MASERJIAN, J ;
MADHUKAR, A .
PHYSICAL REVIEW LETTERS, 1979, 43 (22) :1683-1686
[6]  
HESS DW, 1975, J ELECTROCHEM SOC, V122, P1124
[7]   A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J].
IRENE, EA ;
TIERNEY, E ;
ANGILELLO, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2594-2597
[8]   EFFECT OF AMBIENT TEMPERATURE AND COOLING RATE ON SURFACE CHARGE AT SILICON/SILICON DIOXIDE INTERFACE [J].
LAMB, DR ;
BADCOCK, FR .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (01) :11-&
[10]   THE GROWTH OF OXIDATION STACKING-FAULTS AND THE POINT-DEFECT GENERATION AT SI-SIO INTERFACE DURING THERMAL-OXIDATION OF SILICON [J].
LIN, AM ;
DUTTON, RW ;
ANTONIADIS, DA ;
TILLER, WA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1121-1130