EFFECT OF AMBIENT TEMPERATURE AND COOLING RATE ON SURFACE CHARGE AT SILICON/SILICON DIOXIDE INTERFACE

被引：27

作者：

LAMB, DR

BADCOCK, FR

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 24卷 / 01期

关键词：

D O I：

10.1080/00207216808937997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：11 / &

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