STABILITY AND SURFACE CHARGE IN MOS SYSTEM

被引：15

作者：

BADCOCK, FR

LAMB, DR

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 24卷 / 01期

关键词：

D O I：

10.1080/00207216808937996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / +

页数：1

共 9 条

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[2] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[3]

DEAL BE, 1966, SEMICOND PROD SOLID, V9, P25

[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[5] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J].

JORGENSEN .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :874-&

[6]

KOOI E, 1966, PHILIPS RES REP, V21, P477

[7] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1013-&

[8] INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON SI SURFACE POTENTIAL IN SI-SIO2 SYSTEM [J].

REVESZ, AG ;

ZAININGER, KH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :246-+

[9] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

SNOW, EH ;

GROVE, AS ;

DEAL, BE ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&

← 1 →