Scalability of small-aperture selectively oxidized vertical cavity lasers

被引:71
作者
Choquette, KD
Chow, WW
Hadley, GR
Hou, HQ
Geib, KM
机构
[1] Ctr. Compd. Semiconduct. Technol., Sandia National Laboratories, Albuquerque
关键词
D O I
10.1063/1.118234
中图分类号
O59 [应用物理学];
学科分类号
摘要
We analyze the threshold properties of small area selectively oxidized vertical cavity lasers. Agreement for threshold gain versus laser size is found using the experimental intrinsic threshold voltage matched with a gain theory, as compared to a two-dimensional optical cavity simulation. Our analysis indicates the increasing threshold current density of small area lasers arises from both increasing threshold gain and the concomitant increasing leakage current. We further show that the optical loss can be reduced for lasers with areas as small as 0.25 mu m(2) while maintaining sufficient transverse optical confinement by displacing the apertures longitudinally away from the cavity and reducing the oxide thickness. (C) 1997 American Institute of Physics.
引用
收藏
页码:823 / 825
页数:3
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