High-temperature phonon thermal conductivity of nanostructures

被引：47

作者：

Braginsky, L ^{[1
]}

Lukzen, N

Shklover, V

Hofmann, H

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Int Tomog Ctr, Novosibirsk 630090, Russia

[3] Swiss Fed Inst Technol, Crystallog Lab, CH-8092 Zurich, Switzerland

[4] Swiss Fed Inst Technol, Powder Technol Lab, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.66.134203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phonon propagation in the disordered nanostructures at a high (about the Debye temperature or higher) temperature is considered. Scattering at the grain boundaries is assumed to be the main mechanism restricting the thermal conductivity. Influence of the structure (the grain size and its dispersion, the pore diameter and their volume concentration, and the intergrain interface structure) as well as temperature on the thermal conductivity is discussed.

引用

页码：1 / 9

页数：9

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