Controlled growth and field emission properties of CuS nanowalls

被引：63

作者：

Feng, Xiaoping

Li, Yongxiu

Liu, Huibiao ^{[1
]}

Li, Yuliang

Cui, Shuang

Wang, Ning

Jiang, Li

Liu, Xiaofeng

Yuan, Mingjian

机构：

[1] Chinese Acad Sci, CAS Key Lab Organ Solids, Ctr Mol Sci, Inst Chem, Beijing 100080, Peoples R China

[2] Nanchang Univ, Dept Chem, Nanchang 330047, Jiangxi, Peoples R China

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 14期

关键词：

D O I：

10.1088/0957-4484/18/14/145706

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Vertically oriented CuS nanowalls supported on a copper substrate have been synthesized through a facile method involving an inorganic vapour-solid phase reaction. The CuS nanowalls were well connected to form an extended network. The shapes of the CuS nanostructures could be controlled by adjusting the reaction conditions such as the reaction temperature and the flow rate of argon gas. The crystallinity of the nanowalls was investigated by XRD and their morphological features were characterized by FESEM. Both TEM and SAED analyses revealed that the nanowalls are single-crystalline. The field emission properties of the CuS nanowalls were investigated. The turn-on field and current density of the CuS nanowalls are comparable to those of many other semiconductor nanomaterials, which suggests that the CuS nanowalls may have potential applications in the vacuum microelectronics industry.

引用

页数：5

共 38 条

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