Electronic structure of GaN stacking faults

被引：55

作者：

Bandic, ZZ ^{[1
]}

McGill, TC ^{[1
]}

Ikonic, Z ^{[1
]}

机构：

[1] UNIV BELGRADE, SCH ELECT ENGN, YU-11000 BELGRADE, YUGOSLAVIA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.56.3564

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The calculation of the electronic structure of the GaN stacking faults in the framework of the local empirical pseudopotential theory is presented. The stacking faults in both zinc-blende and wurtzite GaN are predicted to introduce electronic levels within the band gap, with the energy (0.13+/-0.01) eV above the valence-band top. These levels are found to originate from interface states of heterocrystalline wurtzite (0001)-zinc-blende (111) interfaces. The possible implications of stacking fault electronic states on the luminescence properties of GaN are discussed.

引用

页码：3564 / 3566

页数：3