Transmission electron microscopy of non-thickness-limited anodic films on tantalum

被引:7
作者
Lu, Q [1 ]
Skeldon, P
Thompson, GE
Graham, MJ
Masheder, D
Habazaki, H
Shimizu, K
机构
[1] Univ Manchester, Inst Sci & Technol, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[3] AVX Ltd, Paignton TQ4 7ER, Devon, England
[4] Hokkaido Univ, Grad Sch Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[5] Keio Univ, Univ Chem Lab, Yokohama, Kanagawa 223, Japan
关键词
D O I
10.1149/1.1515279
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Non-thickness-limited (NTL) growth of anodic films on tantalum is a remarkable recently reported phenomenon whereby anodic films can be formed on tantalum to high thickness due to a change in the film growth mechanism from the usual high-field type of process. The present work employs transmission electron microscopy to reveal the structure, composition, and morphology of an NTL-type film formed by anodizing tantalum at 1 A m(-2) in 10 wt % dibasic potassium phosphate/glycerol electrolyte at 453 K. A relatively compact, amorphous layer of NTL-type film material, composed of essentially tantala, was formed above an inner layer of usual high-field-type tantala under the selected conditions of anodizing and drying of the electrolyte. The field for growth of NTL-type film material is less than or equal to10 MV m(-1), compared with similar to400 MV m(-1) for high-field growth. Thus, the thickness of the inner layer is approximately equal to the product of the formation ratio for usual anodic tantala and the final anodizing voltage. (C) 2002 The Electrochemical Society.
引用
收藏
页码:B531 / B533
页数:3
相关论文
共 9 条
[1]  
DELLOCA CJ, 1970, J ELECTROCHEM SOC, V117, P1545, DOI 10.1149/1.2407380
[2]  
KNAUSENBERGER WH, 1964, J ELECTROCHEM SOC, V111, P927
[3]   Non-thickness-limited growth of anodic oxide films on tantalum [J].
Li, YM ;
Young, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (09) :B337-B342
[4]   Non-thickness-limited growth of anodic oxide films on valve metals [J].
Melody, Brian ;
Kinard, Tony ;
Lessner, Philip .
1998, IEEE, Piscataway, NJ, United States (01)
[5]   MORPHOLOGY AND MECHANISM OF FORMATION OF POROUS ANODIC FILMS ON ALUMINIUM [J].
OSULLIVAN, JP ;
WOOD, GC .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1531) :511-+
[6]   MIGRATION OF OXYGEN DURING ANODIC-OXIDATION OF TANTALUM [J].
PRINGLE, JPS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1391-1400
[7]   TRANSPORT NUMBERS OF METAL AND OXYGEN DURING ANODIC-OXIDATION OF TANTALUM [J].
PRINGLE, JPS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :398-407
[8]  
PRINGLE JPS, 1978, ELECTROCHEMICAL SOC, V781, P465
[9]  
Randall J.J., 1965, Electrochim. Acta, V10, P183, DOI [10.1016/0013-4686(65)87018-9, DOI 10.1016/0013-4686(65)87018-9]