Band alignments and offsets in In(As,Sb)/InAs superlattices

被引:28
作者
Li, YB
Bain, DJ
Hart, L
Livingstone, M
Ciesla, CM
Pullin, MJ
Tang, PJP
Yuen, WT
Galbraith, I
Phillips, CC
Pidgeon, CR
Stradling, RA
机构
[1] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND GROWTH,LONDON SW7 2BZ,ENGLAND
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 07期
关键词
D O I
10.1103/PhysRevB.55.4589
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The band alignments and band offsets were investigated for In(As,Sb)/InAs superlattices of various periods and compositions. Magnetoabsorption experiments allowed identification of subband energies and in-plane reduced masses. Using an 8 x 8 k . p band-structure calculation which takes account of nonparabolicity, valence subband mixing, and strain effects, we are able to fit calculated absorption curves to transition energies and reduced masses. Comparison of fits on several samples confirm that the electrons lie in the In(As,Sb) layer and the holes in the InAs layer. By using the fitted curve offsets, we are able to calculate the fractional conduction-band-offset parameter, Q(c), which for a type-II heterostructure can be greater than 1 and which we found to be 2.06 +/- 0.11.
引用
收藏
页码:4589 / 4595
页数:7
相关论文
共 24 条
[11]   INAS1-XSBX/IN1-YGAYAS MULTIPLE-QUANTUM-WELL HETEROSTRUCTURE DESIGN FOR IMPROVED 4-5 MU-M LASERS [J].
LIAU, ZL ;
CHOI, HK .
APPLIED PHYSICS LETTERS, 1994, 64 (24) :3219-3221
[12]  
LIVINGSTONE M, 1996, THESIS HERIOT WATT U
[13]  
LIVINGSTONE M, 1996, CRYST GROWTH, V159, P542
[14]  
MADELUNG O, 1982, LANDOLTBORNSTEIN A, V17
[15]  
MURDIN BN, 1993, THESIS HERIOT WATT U
[16]  
Pullin M. J., 1995, I PHYS C NEW MEXICO, V144, P8
[17]  
Seong T. -Y., 1991, I PHYS C SER, V117, P485
[18]  
SEONG TY, 1990, MATER RES SOC SYMP P, V163, P907, DOI 10.1557/PROC-163-907
[19]   INTERBAND MAGNETOOPTICS OF INAS1-XSBX [J].
SMITH, SN ;
PHILLIPS, CC ;
THOMAS, RH ;
STRADLING, RA ;
FERGUSON, IT ;
NORMAN, AG ;
MURDIN, BN ;
PIDGEON, CR .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (07) :900-906
[20]   4-11 MU-M INFRARED-EMISSION AND 300 K LIGHT-EMITTING-DIODES FROM ARSENIC-RICH INAS1-XSBX STRAINED-LAYER SUPERLATTICES [J].
TANG, PJP ;
PULLIN, MJ ;
CHUNG, SJ ;
PHILLIPS, CC ;
STRADLING, RA ;
NORMAN, AG ;
LI, YB ;
HART, L .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (08) :1177-1180