Hall effect in Gd5(Si1.8Ge2.2)

被引：31

作者：

Stankiewicz, J ^{[1
]}

Morellon, L

Algarabel, PA

Ibarra, MR

机构：

[1] CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain

[2] Univ Zaragoza, E-50009 Zaragoza, Spain

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.61.12651

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the Hall effect of polycrystalline Gd-5(Si1.8Ge2.2) in the temperature range 4-360 K and in magnetic fields of up to 12 T. The Hall resistivity follows the magnetization of the material in the range studied. The anomalous Wall coefficient increases with increasing temperature and shows a sharp dip at the magnetostructural transition. Away from the dip, the Hall coefficient scales roughly with the square of the total resistivity, as expected if side-jump scattering dominates.

引用

页码：12651 / 12653

页数：3

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