Ab initio calculation of the phonon dispersion of antimony-covered (110) surfaces of III-V compounds

被引：11

作者：

Fritsch, J ^{[1
]}

Arnold, M ^{[1
]}

Schröder, U ^{[1
]}

机构：

[1] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.61.16682

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the results from nh initio linear-response calculations performed to investigate the surface phonon dispersion of the antimony-covered (110) surfaces of GaAs, GaP, InAs, and InP. Our computations are carried out for a complete monolayer coverage of antimony adsorbed in the epitaxial continued layer structure. The surfaces are described within the slab-supercell approach. Our density-functional formalism is based on the plane-wave pseudopotential method and the local-density approximation. Rie identify characteristic vibrations of the adsorption overlayer, interface modes, and phonons related to those of the pristine surfaces with changed dispersion due to the adsorption. A comparison of the modes computed for the different systems allows us to analyze systematic trends and to study more thoroughly the physical origin of vibrational states occurring on adsorbate-covered and clean III-V(110) surfaces. Our computed phonon frequencies are in good agreement with experimental data.

引用

页码：16682 / 16691

页数：10

共 57 条

[31]

HUNERMANN M, 1990, THESIS AACHEN U TECH

[32] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].

KOHN, W ;

SHAM, LJ .

PHYSICAL REVIEW, 1965, 140 (4A) :1133-&

[33]

LAFEMINA JP, 1992, SURF SCI REP, V16, P133, DOI 10.1016/0167-5729(92)90014-3

[34] SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF THE (1 MONOLAYER SB) GAP(110) INTERFACE [J].

MIYANO, KE ;

WOICIK, JC ;

KENDELEWICZ, T ;

SPICER, WE ;

RICHTER, M ;

PIANETTA, P .

PHYSICAL REVIEW B, 1993, 47 (11) :6444-6449

[35]

Nowak C, 1996, J ELECTRON SPECTROSC, V80, P143

[36] THE ADSORPTION OF SB ON INAS(110) STUDIED BY PHOTOEMISSION AND PHOTOELECTRON DIFFRACTION [J].

NOWAK, C ;

KRUJATZ, J ;

MARKL, A ;

MEYNE, C ;

CHASSE, A ;

BRAUN, W ;

RICHTER, W ;

ZAHN, DRT .

SURFACE SCIENCE, 1995, 331 :619-624

[37] LOW-ENERGY PHOTOELECTRON DIFFRACTION STUDY OF EPITAXIAL SB MONOLAYERS ON GAAS(110) [J].

NOWAK, C ;

HEMPELMANN, A ;

MARKL, A ;

CHASSE, A ;

DUDZIK, E ;

MULLER, C ;

MCGOVERN, IT ;

BRAUN, W ;

RICHTER, W ;

ZAHN, DRT .

SURFACE SCIENCE, 1995, 331 :564-568

[38] EPITAXIAL ANTIMONY MONOLAYERS ON III-V(110) SURFACES STUDIED BY LOW-ENERGY PHOTOELECTRON DIFFRACTION [J].

NOWAK, C ;

CHASSE, A ;

HEMPELMANN, A ;

RICHTER, W ;

DUDZIK, E ;

WHITTLE, R ;

MCGOVERN, IT ;

BRAUN, W ;

ZAHN, DRT .

SURFACE SCIENCE, 1994, 307 :685-690

[39]

NOWAK C, 1996, THESIS BERLIN U TECH

[40] SB AND BI ON GAAS(110) - SUBSTRATE-STABILIZED OVERLAYER STRUCTURES STUDIED WITH SCANNING TUNNELING MICROSCOPY [J].

PATRIN, JC ;

LI, YZ ;

WEAVER, JH .

PHYSICAL REVIEW B, 1992, 46 (16) :10221-10231

← 1 2 3 4 5 6 →