Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

被引：42

作者：

Lu, X ^{[1
]}

Iyer, SSK ^{[1
]}

Hu, CM ^{[1
]}

Cheung, NW ^{[1
]}

Min, J ^{[1
]}

Fan, Z ^{[1
]}

Chu, PK ^{[1
]}

机构：

[1] CITY UNIV HONG KONG,DEPT PHYS & MAT SCI,KOWLOON,HONG KONG

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 19期

关键词：

D O I：

10.1063/1.120127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the implementation of ion-cut silicon-on-insulator (SOI) wafer fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated. (C) 1997 American Institute of Physics. [S0003-6951(97)00245-3].

引用

页码：2767 / 2769

页数：3

共 17 条

[1] Transfer of structured and patterned thin silicon films using the Smart-Cut(R) process [J].

Aspar, B ;

Bruel, M ;

Zussy, M ;

Cartier, AM .

ELECTRONICS LETTERS, 1996, 32 (21) :1985-1986

[2] Application of hydrogen ion beams to Silicon On Insulator material technology [J].

Bruel, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 108 (03) :313-319

[3]

Bruel M, 1995, 1995 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, P178, DOI 10.1109/SOI.1995.526518

[4] PLASMA IMMERSION ION-IMPLANTATION FOR ULSI PROCESSING [J].

CHEUNG, NW .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :811-820

[5] Plasma immersion ion implantation for semiconductor processing [J].

Cheung, NW .

MATERIALS CHEMISTRY AND PHYSICS, 1996, 46 (2-3) :132-139

[6]

Chu P.K., 1996, SEMICONDUCTOR INT, V6, P165

[7] Plasma immersion ion implantation - A fledgling technique for semiconductor processing [J].

Chu, PK ;

Qin, S ;

Chan, C ;

Cheung, NW ;

Larson, LA .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1996, 17 (6-7) :207-280

[8]

CHU PK, 1997, SOLID STATE TECHNOL, V40, pS9

[9]

COLINGE JP, 1991, SILICON INSULATOR TE

[10]

Cristoloveanu S., 1995, ELECT CHARACTERIZATI

← 1 2 →