Dynamical analysis of the buildup process near resonance

被引:14
作者
Villavicencio, J
Romo, R
机构
[1] Ctr Invest Cient & Educ Super Ensenada, Ensenada 22800, Baja California, Mexico
[2] Univ Autonoma Baja California, Fac Ciencias, Ensenada 22800, Baja California, Mexico
关键词
D O I
10.1063/1.126982
中图分类号
O59 [应用物理学];
学科分类号
摘要
The time evolution of the buildup process inside a double-barrier system for off-resonance incidence energies is studied by considering the analytic solution of the time-dependent Schrodinger equation with cutoff plane wave initial conditions. We show that the buildup process exhibits invariances under arbitrary changes on the system parameters, which can be successfully described by a simple and easy-to-use one-level formula. We find that the buildup of the off-resonant probability density is characterized by an oscillatory pattern modulated by the resonant case which governs the duration of the transient regime. This is evidence that off-resonant and resonant tunneling are two correlated processes, whose transient regime is characterized by the same transient time constant of two lifetimes. (C) 2000 American Institute of Physics. [S0003-6951(00)00429-0].
引用
收藏
页码:379 / 381
页数:3
相关论文
共 11 条
[1]   DESCRIPTION OF RESONANT-TUNNELING NEAR-THRESHOLD [J].
GARCIACALDERON, G ;
ROMO, R ;
RUBIO, A .
PHYSICAL REVIEW B, 1994, 50 (20) :15142-15147
[2]   Transient effects and delay time in the dynamics of resonant tunneling [J].
GarciaCalderon, G ;
Rubio, A .
PHYSICAL REVIEW A, 1997, 55 (05) :3361-3370
[3]   FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].
LURYI, S .
APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492
[4]  
Luryi S, 1998, MODERN SEMICONDUCTOR DEVICE PHYSICS, P253
[5]   PHYSICS OF RESONANT TUNNELING - THE ONE-DIMENSIONAL DOUBLE-BARRIER CASE [J].
RICCO, B ;
AZBEL, MY .
PHYSICAL REVIEW B, 1984, 29 (04) :1970-1981
[6]   Dynamical description of the buildup process in resonant tunneling: Evidence of exponential and nonexponential contributions [J].
Romo, R ;
Villavicencio, J .
PHYSICAL REVIEW B, 1999, 60 (04) :R2142-R2145
[7]   RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].
SOLLNER, TCLG ;
GOODHUE, WD ;
TANNENWALD, PE ;
PARKER, CD ;
PECK, DD .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590
[8]   OBSERVATION OF MILLIMETER-WAVE OSCILLATIONS FROM RESONANT TUNNELING DIODES AND SOME THEORETICAL CONSIDERATIONS OF ULTIMATE FREQUENCY LIMITS [J].
SOLLNER, TCLG ;
BROWN, ER ;
GOODHUE, WD ;
LE, HQ .
APPLIED PHYSICS LETTERS, 1987, 50 (06) :332-334
[9]   Open boundary conditions for a time-dependent analysis of the resonant tunneling structure [J].
Talebian, MA ;
Potz, W .
APPLIED PHYSICS LETTERS, 1996, 69 (08) :1148-1150
[10]   TUNNELING ESCAPE RATE OF ELECTRONS FROM QUANTUM-WELL IN DOUBLE-BARRIER HETEROSTRUCTURES [J].
TSUCHIYA, M ;
MATSUSUE, T ;
SAKAKI, H .
PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2356-2359