DESCRIPTION OF RESONANT-TUNNELING NEAR-THRESHOLD

被引：3

作者：

GARCIACALDERON, G

ROMO, R

RUBIO, A

机构：

[1] CTR INVEST CIENT & EDUC SUPER ENSENADA, ENSENADA, MEXICO

[2] UNIV AUTONOMA BAJA CALIF, FAC CIENCIAS, ENSENADA, MEXICO

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.50.15142

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The behavior of a sharp resonance in a resonant tunneling structure as it approaches and passes through the emitter threshold due to an applied voltage is analyzed using a resonance formalism. The transmission coefficient T(E) near resonance energy is written as a threshold factor times a Breit-Wigner formula. A typical example is used to show that the threshold factor and the resonance decay width are essential to reproduce the negative differential resistance region obtained from exact numerical calculations. For the valley contribution the resonance energy is below threshold and the crucial contribution comes from the part of the decay width that still lies above it. © 1994 The American Physical Society.

引用

页码：15142 / 15147

页数：6

共 14 条

[1] COHERENT AND SEQUENTIAL TUNNELING IN SERIES BARRIERS [J].