Energy band structure of Ru/(Ba,Sr)TiO3/Si capacitor deposited by inductively-coupled plasma-assisted radio-frequency-magnetron plasma sputtering

被引：12

作者：

Kikkawa, T

Fujiwara, N

Yamada, H

Miyazaki, S

Nishiyama, F

Hirose, M

机构：

[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398527, Japan

[2] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398527, Japan

[3] Hiroshima Univ, Radiat Res Facil, Higashihiroshima 7398527, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 15期

关键词：

D O I：

10.1063/1.1509467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Properties of barium strontium titanate (Ba,Sr)TiO3 (BST) thin films, deposited by inductively-coupled-plasma (ICP)-assisted rf magnetron-plasma sputtering, were investigated. It is found that the ICP-assisted rf-magnetron plasma improved the stoichiometry of the BST film. The energy band structure of the Ru/BST/Si system was investigated. It is found that the bandgaps of BST and interface SiO2 were 4.30 and 8.95 eV, respectively, and the work function of Ru was 4.97 eV. The valence band offsets for BST/Si and interface SiO2/Si are 3.55 and 4.48 eV, respectively. As a result, the conduction band barrier height of Ru against BST was found to be 1.40 eV. (C) 2002 American Institute of Physics.

引用

页码：2821 / 2823

页数：3

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