Photoelectron yield spectroscopy of electronic states at ultrathin SiO2/Si interfaces

被引：30

作者：

Miyazaki, S ^{[1
]}

Maruyama, T ^{[1
]}

Kohno, A ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/S0167-9317(99)00339-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total photoelectron yield spectroscopy (PYS) has been applied to evaluate the energy distribution of electronic defect states for ultrathin SiO2(less than or equal to 4.5nm)/Si(100) system. The novelty and usefulness of this technique have been demonstrated through the observation of the reduction in defect states with progressive dilute-HF treatment for such ultrathin SiO2/Si(100) and the comparison of the PYS and the quasi-static C-V measurements for 4.5nm-thick SiO2/Si(100).

引用

页码：63 / 66

页数：4

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