Gamma-X electron transfer in a triple-barrier heterostructure

被引：5

作者：

Kim, GG

Roh, DW

Paek, SW

Lee, EH

机构：

[1] Electronics and Telecom. Res. Inst., Taejon 305-600

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.365673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron Gamma-X intervalley interlayer transfer through the confined X states of the AlAs barrier and the enhanced electron tunneling effect have been observed in the AlAs/GaAs (001) triple-barrier heterostructure. The effects of the lower X-valley confined states, the field-induced interlayer state mixing, and the quantum-well excited energy states are analyzed with the local density of states under the external bias, using the scattering theoretic Green's function approach. The experimental results show good agreements with theory. (C) 1997 American Institute of Physics.

引用

页码：3368 / 3373

页数：6

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