The properties of Schottky junctions on Nb-doped SrTiO3 (001)

被引：66

作者：

Shimizu, T

Gotoh, N

Shinozaki, N

Okushi, H

机构：

[1] Electrotechnical Laboratory, Tsukuba, Ibaraki 305

[2] Science University of Tokyo, Noda, Chiba 278

[3] Tokai University, Hiratsuka, Kanagawa 259-12

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

Nb-doped SrTiO3; Ozone treatment; Schottky barrier height; ideality factor; Schottky-Mott rule;

D O I：

10.1016/S0169-4332(97)80114-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A systematic Investigation of surface treatments for metal/Nb-doped SrTiO3 (NSTO) (001) junctions has been described. Well-controlled metal/NSTO (001) interfaces have been obtained using in-situ deposition of metal electrodes on a NSTO surface soon after the surface treatment using high-purity ozone. As a result, the current-voltage (I-V) characteristics of the Au/NSTO and Cu/NSTO Schottky barrier (SB) junctions show high rectification ratios over nine orders of magnitude. The SE heights evaluated from the I-V characteristics are 1.42 eV fur Au/NSTO and 1.02 eV for Cu/NSTO.

引用

页码：400 / 405

页数：6

共 25 条

[1] EPITAXIAL-GROWTH OF SRTIO3 FILMS ON PT ELECTRODES AND THEIR ELECTRICAL-PROPERTIES [J].