Organic field-effect transistors using di(2-thienyl)naphthodithiophenes as active layers

被引:19
作者
Kunugi, Y
Takimiya, K
Yamashita, K
Aso, Y
Otsubo, T
机构
[1] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 7398521, Japan
[2] Hiroshima Univ, Grad Sch Engn, Higashihiroshima 7398527, Japan
关键词
D O I
10.1246/cl.2002.958
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two isomeric di(2-thienyl)naphthodithiophenes, anti- and syn-DThNDTs, have been investigated as active materials of organic field-effect transistors (FETs). Field-effect mobilities of 2-3 x 10(-4) cm(2) V-1 S-1 were obtained for the anti-DThNDT film, while no obvious FET function was observed with the syn-DThNDT film.
引用
收藏
页码:958 / 959
页数:2
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