Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals

被引：6

作者：

Hidalgo, P ^{[1
]}

Plaza, JL

Méndez, B

Diéguez, E

Piqueras, J

机构：

[1] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Univ Autonoma Madrid, Fac Ciencias, Dept Fis Mat, E-28049 Madrid, Spain

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 48期

关键词：

D O I：

10.1088/0953-8984/14/48/370

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration.

引用

页码：13211 / 13215

页数：5

共 13 条

[11] X-RAY PHOTOELECTRON-SPECTROSCOPY AND OPTOELECTRICAL PROPERTIES OF LOW-CONCENTRATION ERBIUM-DOPED GASB LAYERS GROWN FROM SB-RICH SOLUTIONS BY LIQUID-PHASE EPITAXY [J].

SUN, YM ;

WU, MC .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) :6691-6695

[12] Low concentration GaSb grown from Sb-rich solutions by liquid phase epitaxy in the presence of erbium [J].

Sun, YM ;

Wu, MC ;

Ting, YT .

JOURNAL OF CRYSTAL GROWTH, 1996, 158 (04) :449-454

[13] LUMINESCENCE PROPERTIES OF ERBIUM IN III-V COMPOUND SEMICONDUCTORS [J].

ZAVADA, JM ;

ZHANG, DH .

SOLID-STATE ELECTRONICS, 1995, 38 (07) :1285-1293

← 1 2 →