Atomic models, domain-wall arrangement, and electronic structure of the dense Pb/Si(111)-√3x√3 phase -: art. no. 161410

被引:37
作者
Hupalo, M [1 ]
Chan, TL [1 ]
Wang, CZ [1 ]
Ho, KM [1 ]
Tringides, MC [1 ]
机构
[1] Iowa State Univ, Dept Phys, Ames, IA 50011 USA
关键词
D O I
10.1103/PhysRevB.66.161410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Despite extensive work in the literature, the structure of the dense Si(111)-Pb(root3 x root3) phase (ideal coverage theta = 4/3 ML) is still unknown because a variety of phases can form, within few percent coverage variation. These phases differ in the way equivalent root3 x root3 domains self-organize in different patterns with different domain-wall arrangements. With scanning tunneling microscopy and first-principles calculations we have identified the atomic structure within domains, domain-wall arrangement, and the binding site (H3 or T4) occupied by Pb atoms within each domain.
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页码:1 / 4
页数:4
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