Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant

被引：49

作者：

Bierwagen, Oliver ^{[1
]}

White, Mark E. ^{[1
]}

Tsai, Min-Ying ^{[2
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 26期

关键词：

free energy; indium compounds; molecular beam epitaxial growth; plasma materials processing; semiconductor growth; semiconductor materials; semiconductor thin films; surface energy; surface roughness; surfactants; yttrium compounds; zirconium compounds; GAN SURFACE; TIN OXIDE; GROWTH; DEPOSITION; SUBSTRATE; SAPPHIRE; ZIRCONIA; INAS;

D O I：

10.1063/1.3276910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface roughness of In2O3(001) films is a roadblock to potential semiconductor applications of this material. Using plasma-assisted molecular beam epitaxy we found that In2O3(001) films grow rough by the formation of {111} facets and In2O3(111) films grow smooth without facetting due to the conventionally used (oxygen-rich) conditions. This behavior indicates that the (111) surface is thermodynamically prefered over the (001) surface. We demonstrate that under indium-rich growth conditions these thermodynamics are changed allowing In2O3(001) films to grow smoothly without facetting. Surface indium plays a key role by acting as an auto surfactant that lowers the surface free energy difference between the (001) and the (111) surface.

引用

页数：3

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