Preparation of nanocrystalline silicon in amorphous silicon carbide matrix

被引：72

作者：

Kurokawa, Yasuyoshi

Miyajima, Shinsuke

Yamada, Akira

Konagai, Makoto

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 37-41期

关键词：

nanocrystalline; silicon quantum dots; superlattice; silicon carbide;

D O I：

10.1143/JJAP.45.L1064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by the thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscopy (TEM) revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers.

引用

收藏

页码：L1064 / L1066

页数：3

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