Size-controlled highly luminescent silicon nanocrystals:: A SiO/SiO2 superlattice approach

被引:734
作者
Zacharias, M
Heitmann, J
Scholz, R
Kahler, U
Schmidt, M
Bläsing, J
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle Saale, Germany
[2] Univ Magdeburg, Inst Expt Phys, D-39106 Magdeburg, Germany
关键词
D O I
10.1063/1.1433906
中图分类号
O59 [应用物理学];
学科分类号
摘要
Phase separation and thermal crystallization of SiO/SiO2 superlattices results in ordered arranged silicon nanocrystals. The preparation method which is fully compatible with Si technologies enables independent control of particle size as well as of particle density and spatial position by using a constant stoichiometry of the layers. Transmission electron microscopy investigations confirm the size control in samples with an upper limit of the nanocrystal sizes of 3.8, 2.5, and 2.0 nm without decreasing the silicon nanocrystal density for smaller sizes. The nanocrystals show a strong luminescence intensity in the visible and near-infrared region. A size-dependent blueshift of the luminescence and a luminescence intensity comparable to porous Si are observed. Nearly size independent luminescence intensity without bleaching effects gives an indirect proof of the accomplishment of the independent control of crystal size and number. (C) 2002 American Institute of Physics.
引用
收藏
页码:661 / 663
页数:3
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