Nanocrystalline-silicon superlattice produced by controlled recrystallization

被引：252

作者：

Tsybeskov, L ^{[1
]}

Hirschman, KD

Duttagupta, SP

Zacharias, M

Fauchet, PM

McCaffrey, JP

Lockwood, DJ

机构：

[1] Rochester Inst Technol, Dept Elect Engn, Rochester, NY 14623 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Rochester Inst Technol, Dept Microelect Engn, Rochester, NY 14623 USA

[4] Boise State Univ, Dept Elect Engn, Boise, ID 83725 USA

[5] Otto Von Guericke Univ, Inst Phys Expt, Magdeburg, Germany

[6] Univ Rochester, Laser Energet Lab, Dept Phys & Astron, Rochester, NY 14627 USA

[7] Univ Rochester, Inst Opt, Rochester, NY 14627 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanocrystalline-silicon superlattices are produced by controlled recrystallization of amorphous-Si/SiO(2) multilayers. The recrystallization is performed by a two-step procedure: rapid thermal annealing at 600-1000 degrees C, and furnace annealing at 1050 degrees C. Transmission electron microscopy, Raman scattering, x-ray and electron diffraction, and photoluminescence spectroscopy show an ordered structure with Si nanocrystals confined between SiO(2) layers. The size of the Si nanocrystals is limited by the thickness of the cc-Si layer, the shape is nearly spherical, and the orientation is random. The luminescence from the nc-Si superlattices is demonstrated and studied. (C) 1998 American Institute of Physics.

引用

页码：43 / 45

页数：3

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