TRANSIENT SOLID-PHASE CRYSTALLIZATION STUDY OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS BY INSITU X-RAY-DIFFRACTION

被引：21

作者：

BISARO, R

MAGARINO, J

PASTOL, Y

GERMAIN, P

ZELLAMA, K

机构：

[1] EURODISPLAY,F-91404 ORSAY,FRANCE

[2] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

[3] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75252 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.40.7655

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7655 / 7662

页数：8

共 48 条

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